Effective electron mass and phonon modes in n-type hexagonal InN
Identifieur interne : 00E426 ( Main/Repository ); précédent : 00E425; suivant : 00E427Effective electron mass and phonon modes in n-type hexagonal InN
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Abstract
Infrared spectroscopic ellipsometry and micro-Raman scattering are used to study vibrational and electronic properties of high-quality hexagonal InN. The 0.22-μm-thick highly n-conductive InN film was grown on c-plane sapphire by radio-frequency molecular-beam epitaxy. Combining our results from the ellipsometry data analysis with Hall-effect measurements, the isotropically averaged effective electron mass in InN is determined as 0.14m0. The resonantly excited zone center E1 (TO) phonon mode is observed at 477 cm-1 in the ellipsometry spectra. Despite the high electron concentration in the film, a strong Raman mode occurs in the spectral range of the unscreened A1(LO) phonon. Because an extended carrier-depleted region at the sample surface can be excluded from the ellipsometry-model analysis, we assign this mode to the lower branch of the large-wave-vector LO-phonon-plasmon coupled modes arising from nonconserving wave-vector scattering processes. The spectral position of this mode at 590 cm-1 constitutes a lower limit for the unscreened A1(LO) phonon frequency.
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Kasic</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Center for Microelectronic and Optical Materials Research, Department of Electrical Engineering, University of Nebraska, Lincoln 68588, Nebraska</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Nebraska</region></placeName><wicri:cityArea>Center for Microelectronic and Optical Materials Research, Department of Electrical Engineering, University of Nebraska, Lincoln 68588</wicri:cityArea></affiliation><affiliation wicri:level="3"><inist:fA14 i1="04"><s1>Institut fur Oberflachenmodifizierung Leipzig e.V., Permoserstrasse 15, 04318 Leipzig, Germany</s1></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Institut fur Oberflachenmodifizierung Leipzig e.V., Permoserstrasse 15, 04318 Leipzig</wicri:regionArea><placeName><region type="land" nuts="1">Saxe (Land)</region><region type="district" nuts="2">District de Leipzig</region><settlement type="city">Leipzig</settlement></placeName></affiliation></author><author><name sortKey="Schubert, M" uniqKey="Schubert M">M. Schubert</name></author><author><name sortKey="Saito, Y" uniqKey="Saito Y">Y. Saito</name></author><author><name sortKey="Nanishi, Y" uniqKey="Nanishi Y">Y. Nanishi</name></author><author><name sortKey="Wagner, G" uniqKey="Wagner G">G. Wagner</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Universitat Leipzig, Fakultat fur Physik und Geowissenschaften, Linnestrasse 5, 04103 Leipzig, Germany</s1><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Universitat Leipzig, Fakultat fur Physik und Geowissenschaften, Linnestrasse 5, 04103 Leipzig</wicri:regionArea><placeName><region type="land" nuts="1">Saxe (Land)</region><region type="district" nuts="2">District de Leipzig</region><settlement type="city">Leipzig</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">02-0160073</idno><date when="2002-03-15">2002-03-15</date><idno type="stanalyst">PASCAL 02-0160073 AIP</idno><idno type="RBID">Pascal:02-0160073</idno><idno type="wicri:Area/Main/Corpus">00F997</idno><idno type="wicri:Area/Main/Repository">00E426</idno></publicationStmt><seriesStmt><idno type="ISSN">1098-0121</idno><title level="j" type="abbreviated">Phys. rev., B, Condens. matter mater. phys.</title><title level="j" type="main">Physical review. B, Condensed matter and materials physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Effective mass</term><term>Ellipsometry</term><term>Experimental study</term><term>Hall effect</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Infrared spectra</term><term>Phonon spectra</term><term>Phonon-plasmon interactions</term><term>Raman spectra</term><term>Semiconductor epitaxial layers</term><term>Wide band gap semiconductors</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>6320</term><term>7830</term><term>Etude expérimentale</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Semiconducteur bande interdite large</term><term>Masse effective</term><term>Spectre phonon</term><term>Ellipsométrie</term><term>Spectre Raman</term><term>Spectre IR</term><term>Couche épitaxique semiconductrice</term><term>Effet Hall</term><term>Interaction phonon plasmon</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Infrared spectroscopic ellipsometry and micro-Raman scattering are used to study vibrational and electronic properties of high-quality hexagonal InN. The 0.22-μm-thick highly n-conductive InN film was grown on c-plane sapphire by radio-frequency molecular-beam epitaxy. Combining our results from the ellipsometry data analysis with Hall-effect measurements, the isotropically averaged effective electron mass in InN is determined as 0.14m<sub>0</sub>. The resonantly excited zone center E<sub>1</sub> (TO) phonon mode is observed at 477 cm<sup>-1</sup> in the ellipsometry spectra. Despite the high electron concentration in the film, a strong Raman mode occurs in the spectral range of the unscreened A<sub>1</sub>(LO) phonon. Because an extended carrier-depleted region at the sample surface can be excluded from the ellipsometry-model analysis, we assign this mode to the lower branch of the large-wave-vector LO-phonon-plasmon coupled modes arising from nonconserving wave-vector scattering processes. The spectral position of this mode at 590 cm<sup>-1</sup> constitutes a lower limit for the unscreened A<sub>1</sub>(LO) phonon frequency.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1098-0121</s0></fA01><fA02 i1="01"><s0>PRBMDO</s0></fA02><fA03 i2="1"><s0>Phys. rev., B, Condens. matter mater. phys.</s0></fA03><fA05><s2>65</s2></fA05><fA06><s2>11</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Effective electron mass and phonon modes in n-type hexagonal InN</s1></fA08><fA11 i1="01" i2="1"><s1>KASIC (A.)</s1></fA11><fA11 i1="02" i2="1"><s1>SCHUBERT (M.)</s1></fA11><fA11 i1="03" i2="1"><s1>SAITO (Y.)</s1></fA11><fA11 i1="04" i2="1"><s1>NANISHI (Y.)</s1></fA11><fA11 i1="05" i2="1"><s1>WAGNER (G.)</s1></fA11><fA14 i1="01"><s1>Universitat Leipzig, Fakultat fur Physik und Geowissenschaften, Linnestrasse 5, 04103 Leipzig, Germany</s1><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>Center for Microelectronic and Optical Materials Research, Department of Electrical Engineering, University of Nebraska, Lincoln 68588, Nebraska</s1></fA14><fA14 i1="03"><s1>Faculty of Science and Engineering, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="04"><s1>Institut fur Oberflachenmodifizierung Leipzig e.V., Permoserstrasse 15, 04318 Leipzig, Germany</s1></fA14><fA20><s2>115206-115206-7</s2></fA20><fA21><s1>2002-03-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>144 B</s2></fA43><fA44><s0>8100</s0><s1>© 2002 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>02-0160073</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physical review. B, Condensed matter and materials physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Infrared spectroscopic ellipsometry and micro-Raman scattering are used to study vibrational and electronic properties of high-quality hexagonal InN. The 0.22-μm-thick highly n-conductive InN film was grown on c-plane sapphire by radio-frequency molecular-beam epitaxy. Combining our results from the ellipsometry data analysis with Hall-effect measurements, the isotropically averaged effective electron mass in InN is determined as 0.14m<sub>0</sub>. The resonantly excited zone center E<sub>1</sub> (TO) phonon mode is observed at 477 cm<sup>-1</sup> in the ellipsometry spectra. Despite the high electron concentration in the film, a strong Raman mode occurs in the spectral range of the unscreened A<sub>1</sub>(LO) phonon. Because an extended carrier-depleted region at the sample surface can be excluded from the ellipsometry-model analysis, we assign this mode to the lower branch of the large-wave-vector LO-phonon-plasmon coupled modes arising from nonconserving wave-vector scattering processes. 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